Infineon HEXFET Type N-Channel MOSFET, 4.1 A, 20 V Enhancement, 3-Pin SOT-23 IRLML6246TRPBF

RS-stocknr.:: 737-7221
Artikelnummer Distrelec:: 304-45-317
Fabrikantnummer:: IRLML6246TRPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 4.1 A, 20 V Enhancement, 3-Pin SOT-23 IRLML6246TRPBF

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RS-stocknr.:: 737-7221
Artikelnummer Distrelec:: 304-45-317
Fabrikantnummer:: IRLML6246TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	20V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	66mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.3W
	Typical Gate Charge Qg @ Vgs	3.5nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 20V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 66mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.3W
	Typical Gate Charge Qg @ Vgs 3.5nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 20V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - IRLML6246TRPBF

This MOSFET is a compact N‑channel enhancement device designed for low-voltage switching in surface-mount assemblies. It operates across a wide temperature range and accepts gate-drive levels compatible with common control circuits. The package and electrical characteristics make it appropriate for space‑constrained boards requiring efficient switching performance without elevated power‑handling requirements.

Features and Benefits:

• Maximum drain-source voltage 20V enables low-voltage switching applications
• Continuous drain current 4.1A supports moderate load currents
• Low on‑resistance 66 mΩ minimises conduction losses
• Typical gate charge 3.5 nC allows faster switching transitions
• Maximum power dissipation 1.3W suits constrained thermal budgets
• Gate-source tolerance up to 12V permits robust drive margins

Applications

• Suitable for battery-management switching in portable systems
• Ideal for load switching in power-distribution modules
• Used with gate drivers in motor-control low-voltage stages
• Can be used for DC-DC converter synchronous switching
• Suitable for signal-level high-speed switching in control circuits

What thermal extremes can this device tolerate in operation?

It is specified to operate from -55 °C up to 150 °C, allowing use in environments with wide temperature fluctuations.

How does the package influence PCB layout and assembly?

The SOT‑23 surface‑mount format with three pins reduces board area and supports automated pick‑and‑place and reflow processes.

What is the expected behaviour under higher gate voltages?

The device limits gate‑source ratings to 12V maximum, so gate drives should remain within this threshold to prevent gate‑oxide stress.

How does the device perform under continuous load?

Continuous drain current is rated at 4.1A while thermal dissipation is constrained to 1.3 W, so adequate copper area or heatsinking is required to maintain safe junction temperatures.