Infineon HEXFET Type N-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23

RS-stocknr.:: 913-4073
Fabrikantnummer:: IRLML6344TRPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23

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Subtotaal (1 rol van 3000 eenheden)*

€ 474,00

(excl. BTW)

€ 573,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Aantal stuks	Per stuk	Per rol*
3000 - 3000	€ 0,158	€ 474,00
6000 - 6000	€ 0,15	€ 450,00
9000 +	€ 0,14	€ 420,00

*prijsindicatie

RS-stocknr.:: 913-4073
Fabrikantnummer:: IRLML6344TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	37mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	6.8nC
	Maximum Power Dissipation Pd	1.3W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	1.4mm
	Standards/Approvals	No
	Height	1.02mm
	Length	3.04mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 37mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 6.8nC
	Maximum Power Dissipation Pd 1.3W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 1.4mm
	Standards/Approvals No
	Height 1.02mm
	Length 3.04mm
	Automotive Standard No

Land van herkomst:: PH

Infineon HEXFET Series MOSFET, 5A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML6344TRPBF

This MOSFET is a high-performance N-channel surface mount device suitable for various applications in the electronics and automation sectors. Designed with a compact SOT-23 package, it measures 3.04mm in length, 1.4mm in width, and 1.02mm in height. It exhibits excellent thermal performance, with an operating temperature range of -55°C to +150°C.

Features & Benefits

• Offers a continuous drain current of 5A for robust performance

• Maximum drain-source voltage of 30V supports various requirements

• Low RDS(on) of 29mΩ at VGS = 4.5V reduces power losses

• Wide gate threshold voltage range enables flexible operation

• Efficient power dissipation capability of 1.3W enhances reliability

Applications

• Ideal for microcontroller load switching in electronic systems

• Used in power management solutions for automotive

• Effective in DC-DC converters for efficient energy conversion

• Suitable for battery management systems to improve performance

• Effective in motor control circuits for automation tasks

What is the significance of the low RDS(on) value?

The low RDS(on) value indicates lower conduction losses, which translates to better efficiency, especially in high-current applications. This characteristic is essential for reducing heat generation in power electronics.

What voltage range can be applied to the gate-source junction?

The maximum gate-source voltage is ±12V, allowing flexibility in driving conditions while ensuring device integrity within rated limits.

How does the device perform under high temperatures?

With a maximum operating temperature of +150°C, the MOSFET is built to withstand harsh environments, ensuring reliable functionality in demanding applications.

What benefits does the surface mount design provide?

The SOT-23 surface mount design allows for compact circuit layouts and enhances thermal management, making it ideal for modern electronic assemblies.