N-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Infineon IRLML0040TRPBF
- RS-stocknr.:
- 913-4051
- Fabrikantnummer:
- IRLML0040TRPBF
- Fabrikant:
- Infineon
Prijs Per stuk (op een rol 3000)**
€ 0,115
(excl. BTW)
€ 0,139
(incl. BTW)
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GRATIS bezorging voor bestellingen vanaf 75,00 €
Aantal stuks | Per stuk | Per rol** |
|---|---|---|
| 3000 + | € 0,115 | € 345,00 |
**prijsindicatie
- RS-stocknr.:
- 913-4051
- Fabrikantnummer:
- IRLML0040TRPBF
- Fabrikant:
- Infineon
- Land van herkomst:
- PH
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 3.6A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML0040TRPBF
This power MOSFET is engineered for efficiency and reliability in a range of electronic circuits. With low on-resistance and high performance, it is suitable for applications that demand energy efficiency and robust operation. This component is notable for its ability to manage significant electrical loads, which makes it relevant for engineers and professionals in the automation and electronics sectors.
Features & Benefits
• Low RDS(on) of 56mΩ reduces switching losses
• Supports enhancement mode for efficient power control
• Maximum continuous drain current of 3.6A for steadfast operation
• Operates at a maximum drain-source voltage of 40V
• Designed for surface mount technology, perfect for compact designs
• Compatible with HEXFET technology for high performance
• Supports enhancement mode for efficient power control
• Maximum continuous drain current of 3.6A for steadfast operation
• Operates at a maximum drain-source voltage of 40V
• Designed for surface mount technology, perfect for compact designs
• Compatible with HEXFET technology for high performance
Applications
• Ideal for load and system switch
• Utilised in DC motor drive systems
• Effective for high-speed switching and amplifiers
• Suitable for surface mount in compact circuitry
• Employed in various power electronic circuits
• Utilised in DC motor drive systems
• Effective for high-speed switching and amplifiers
• Suitable for surface mount in compact circuitry
• Employed in various power electronic circuits
What is the thermal resistance of this device?
The thermal resistance is typically 100°C/W, ensuring efficient heat dissipation during operation.
How does the gate threshold voltage impact device performance?
The gate threshold voltage ranges from 1.0 V to 2.5 V, providing flexibility in gate control across various applications.
Can it handle pulsed drain currents?
Yes, this component can endure pulsed drain currents that exceed its continuous rating, ensuring reliability in transient conditions.
What factors influence the maximum power dissipation of this component?
Power dissipation is mainly affected by ambient temperature and thermal resistance, which impact the junction temperature under load.
How does the MOSFET perform at high temperatures?
This device functions effectively within a temperature range of -55°C to +150°C, ensuring stability in challenging environments.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.6 A |
| Maximum Drain Source Voltage | 40 V |
| Series | HEXFET |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 56 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.3 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Length | 3.04mm |
| Width | 1.4mm |
| Typical Gate Charge @ Vgs | 2.6 nC @ 4.5 V |
| Maximum Operating Temperature | +150 °C |
| Height | 1.02mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |