Infineon HEXFET N-Channel MOSFET, 1.2 A, 30 V Enhancement, 3-Pin SOT-23

RS-stocknr.:: 919-4735
Fabrikantnummer:: IRLML2803TRPBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 1.2 A, 30 V Enhancement, 3-Pin SOT-23

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Subtotaal (1 rol van 3000 eenheden)*

€ 285,00

(excl. BTW)

€ 345,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Verzending vanaf 11 oktober 2027

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Aantal stuks	Per stuk	Per rol*
3000 - 3000	€ 0,095	€ 285,00
6000 - 6000	€ 0,09	€ 270,00
9000 +	€ 0,086	€ 258,00

*prijsindicatie

RS-stocknr.:: 919-4735
Fabrikantnummer:: IRLML2803TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.2A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Power Dissipation Pd	540mW
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	3.3nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.04mm
	Height	1.02mm
	Width	1.4mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.2A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Power Dissipation Pd 540mW
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 3.3nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.04mm
	Height 1.02mm
	Width 1.4mm
	Automotive Standard AEC-Q101

Infineon HEXFET Series MOSFET, 1.2A Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML2803TRPBF

This N-channel MOSFET delivers enhanced performance and reliability for a range of electronic applications. Designed with Hexfet technology, it operates efficiently in surface mount configurations, making it suitable for compact designs in the automation and electrical sectors. The combination of low RDS(on) and a high continuous drain current supports optimal power management in various conditions.

Features & Benefits

• Supports a maximum continuous drain current of 1.2A for effective performance

• High maximum drain-source voltage of 30V allows for versatile usage

• Low maximum drain-source resistance of 250mΩ minimises power losses

• Enhancement mode operation enables efficient switching capabilities

• Compact SOT-23 package is ideal for space-constrained applications

• Operates at high temperatures, with a maximum operating temperature of +150°C

Applications

• Utilised in DC-DC converters for effective energy management

• Employed in motor control circuits for improved precision

• Suitable for power supply switching in consumer electronics

• Integrated into automation systems for efficient load management

What is the optimal gate voltage for operation?

The optimal gate voltage for this device is +10V, allowing for efficient switching and performance.

How does it perform in high temperatures?

This component can function at temperatures up to +150°C, ensuring reliability in thermal conditions.

Can it handle pulsed drain currents?

Yes, it supports pulsed drain currents significantly above continuous ratings, accommodating short current surges.

What mounting type is recommended for this device?

Surface mount is the recommended type, as it provides better thermal performance and space efficiency in circuit designs.

What precautions should be taken during installation?

Proper thermal management and adherence to maximum ratings are necessary to prevent damage during operation.