Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23 IRLML2060TRPBF

RS-stocknr.:: 725-9357
Artikelnummer Distrelec:: 304-45-313
Fabrikantnummer:: IRLML2060TRPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23 IRLML2060TRPBF

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 20 eenheden)*

€ 3,66

(excl. BTW)

€ 4,42

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

340 stuk(s) klaar voor verzending
40 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 26.280 stuk(s) vanaf 13 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
20 - 180	€ 0,183	€ 3,66
200 - 480	€ 0,126	€ 2,52
500 - 980	€ 0,119	€ 2,38
1000 - 1980	€ 0,11	€ 2,20
2000 +	€ 0,102	€ 2,04

*prijsindicatie

RS-stocknr.:: 725-9357
Artikelnummer Distrelec:: 304-45-313
Fabrikantnummer:: IRLML2060TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	1.2A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	480mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	0.67nC
	Maximum Power Dissipation Pd	1.25W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	1.02mm
	Length	3.04mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 1.2A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 480mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 0.67nC
	Maximum Power Dissipation Pd 1.25W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 1.02mm
	Length 3.04mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 1.2A Maximum Continuous Drain Current - IRLML2060TRPBF

This MOSFET is a compact N-channel enhancement device intended for low-power switching in surface-mounted circuits. It offers moderate voltage handling and continuous current capacity for use in portable and space-constrained electronic assemblies, operating reliably across an extended temperature range.

Features and Benefits:

• Low Rds(on) of 480mΩ enables reduced conduction losses
• Maximum Vds 60V allows medium-voltage switching applications
• Continuous drain current 1.2A supports modest load currents
• Gate charge Qg 0.67nC enables faster gate-drive transitions
• Power dissipation rating 1.25W limits thermal rise under load
• Gate-source withstand 16V gives margin for drive variation

Applications

• Suitable for DC switch control in battery-powered devices
• Ideal for small motor-driver circuits and load switching
• Used with logic-level drivers for efficient power conversion
• Can be used for signal-level power distribution on PCBs
• Suitable for compact power-management modules in instrumentation

What temperature conditions can it withstand during operation?

It is specified to function down to -55°C and up to 150°C for use in environments with wide thermal variation.

How does the package affect board layout and assembly?

The SOT-23 surface-mount package minimises board footprint and eases automated placement for high-density assemblies.

What electrical stress limits should designers consider for gate drive?

The maximum gate-source voltage is 16V, so gate drivers should remain within this value to avoid over-stressing the gate.

How does its switching behaviour impact thermal management?

With a typical gate charge of 0.67nC and 1.25W power dissipation, duty cycle and switching frequency must be managed to prevent excessive junction heating.