Infineon HEXFET Type P-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 IRLML9301TRPBF
- RS-stocknr.:
- 725-9366
- Fabrikantnummer:
- IRLML9301TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 4,40
(excl. BTW)
€ 5,40
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 200 stuk(s) vanaf 12 januari 2026
- Plus verzending 440 stuk(s) vanaf 12 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,22 | € 4,40 |
| 200 - 480 | € 0,15 | € 3,00 |
| 500 - 980 | € 0,141 | € 2,82 |
| 1000 - 1980 | € 0,13 | € 2,60 |
| 2000 + | € 0,121 | € 2,42 |
*prijsindicatie
- RS-stocknr.:
- 725-9366
- Fabrikantnummer:
- IRLML9301TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 64mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-45-320 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 64mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-45-320 | ||
Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 3.6A Maximum Continuous Drain Current - IRLML9301TRPBF
This MOSFET semiconductor is designed for efficient power management in various electronic applications. It features a surface mount (SOT-23) design for easy integration in compact electronic circuits. The component operates effectively with a maximum continuous drain current of 3.6A and can handle a maximum drain-source voltage of 30V.
Features & Benefits
• Enhancement mode configuration allows for efficient operation
• High gate threshold voltage range enhances reliability
• Greater thermal resilience
• Optimised for Pulled Drain Current ratings, increasing performance reliability
Applications
• Used for power management in portable gadgets
• Ideal for automation control systems
• Utilised in audio amplifiers and signal processors
• Suitable for DC-DC converters in renewable energy systems
• Great fit for driving motors in robotic
What is the impact of the low on-resistance value on performance?
The low on-resistance of 64mΩ allows for reduced heat generation during operation, enhancing overall efficiency and prolonging component life in high-current applications.
How does the enhancement mode benefit circuit design?
The enhancement mode enables the MOSFET to remain off until a specific gate voltage is reached, providing reliable switching control suited for various electronic designs without unnecessary power loss.
Can this component handle high temperatures?
Yes, it is designed to operate reliably at temperatures up to +150°C, making it suitable for applications exposed to harsh environments or intensive use.
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