Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 60 V Enhancement, 3-Pin SOT-23

RS-stocknr.:: 913-4048
Fabrikantnummer:: IRLML0060TRPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 60 V Enhancement, 3-Pin SOT-23

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€ 351,00

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€ 426,00

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3000 - 3000	€ 0,117	€ 351,00
6000 - 6000	€ 0,111	€ 333,00
9000 +	€ 0,104	€ 312,00

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RS-stocknr.:: 913-4048
Fabrikantnummer:: IRLML0060TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.7A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	92mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	2.5nC
	Maximum Gate Source Voltage Vgs	16V
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	1.25W
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Standards/Approvals	No
	Width	1.4mm
	Height	1.02mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.7A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 92mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 2.5nC
	Maximum Gate Source Voltage Vgs 16V
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 1.25W
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Standards/Approvals No
	Width 1.4mm
	Height 1.02mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 2.7A Maximum Continuous Drain Current - IRLML0060TRPBF

This MOSFET is a compact N-channel enhancement device designed for low-voltage switching and power management in surface-mount applications. It operates across a wide temperature span suitable for demanding thermal environments and is intended for footprint-conscious circuit designs where efficient conduction and controlled gate drive are required.

Features and Benefits:

• Low on-resistance 92mΩ reduces conduction losses
• Handles continuous drain current 2.7A for moderate loads
• Rated drain-source voltage 60V for robust voltage headroom
• Typical gate charge 2.5nC enables fast, efficient switching
• Maximum power dissipation 1.25W limits thermal stress
• Gate-source tolerance 16V permits flexible drive voltages

Applications

• Suitable for DC-DC converters in compact electronics
• Ideal for high-side or low-side switching in controllers
• Used for load switching in battery-powered systems
• Can be used for motor-driver front end in small actuators
• Useful in power-path management on dense PCBs

What thermal extremes can it tolerate during operation?

It is specified to operate between -55°C and 150°C, allowing use in both cold-start and high-temperature environments without derating the electrical specification beyond standard guidelines.

How does the device behave under limited gate drive amplitude?

With a maximum gate-source rating of 16V and typical forward voltage around 1.3V, it can be driven from common logic-level drivers while maintaining controlled conduction characteristics.

What mounting considerations are necessary for effective cooling?

As a SOT-23 surface-mount device with 1.25W maximum dissipation, thermal performance depends on PCB copper area and thermal vias

expanding copper around the pad improves heat spreading.

How does its switching suitability relate to gate charge?

The modest gate charge of 2.5nC minimises drive energy and allows faster transitions with lower gate-driver demand, which is beneficial for switching applications with limited drive capability.