Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23 IRLML2030TRPBF

RS-stocknr.:: 725-9353
Artikelnummer Distrelec:: 304-45-312
Fabrikantnummer:: IRLML2030TRPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23 IRLML2030TRPBF

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 20 eenheden)*

€ 5,40

(excl. BTW)

€ 6,60

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Beperkte voorraad

260 resterend, klaar voor verzending
800 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
20 - 180	€ 0,27	€ 5,40
200 - 480	€ 0,14	€ 2,80
500 - 980	€ 0,132	€ 2,64
1000 - 1980	€ 0,124	€ 2,48
2000 +	€ 0,114	€ 2,28

*prijsindicatie

RS-stocknr.:: 725-9353
Artikelnummer Distrelec:: 304-45-312
Fabrikantnummer:: IRLML2030TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.7A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.3W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Height	1.02mm
	Width	1.4mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.7A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.3W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Height 1.02mm
	Width 1.4mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 100mΩ Maximum Drain Source Resistance - IRLML2030TRPBF

This MOSFET is a compact N-channel enhancement device designed for low-power switching in small-form-factor surface-mount assemblies. It is intended for applications requiring moderate current handling and a 30V blocking capability, performing switching duties across a wide ambient range from cold to high-temperature environments.

Features and Benefits:

• Low on-resistance 100mΩ reduces conduction losses and heat
• 30V drain-source rating permits moderate-voltage switching
• Continuous drain current 2.7A supports sustained load operation
• Low gate charge 1nC enables fast, efficient switching
• Maximum power dissipation 1.3W allows thermal budgeting
• Gate-source withstand 20V provides input margin for drivers

Applications

• Suitable for battery protection and load switching circuits
• Ideal for portable device power-management stages
• Used with DC-DC converters in small SMD designs
• Can be used for LED drivers and small motor control
• Suitable for signal-level switching in consumer electronics

What thermal range can it operate within?

It functions from -55°C up to 150°C, enabling use across extreme ambient conditions.

How is it packaged for PCB assembly?

It is supplied in a SOT-23 surface-mount package for compact board placement.

What electrical role does the device serve in switching designs?

It acts as a low-voltage switch transistor, handling on/off control while limiting conduction losses due to its specified RDS(on).

How small is the component footprint for layout planning?

The device measures 3.04 x 1.4 x 1.02mm, allowing tight component packing on SMD boards.