Vishay IRF740 Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740PBF
- RS-stocknr.:
- 541-0020
- Artikelnummer Distrelec:
- 171-15-835
- Fabrikantnummer:
- IRF740PBF
- Fabrikant:
- Vishay
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*prijsindicatie
- RS-stocknr.:
- 541-0020
- Artikelnummer Distrelec:
- 171-15-835
- Fabrikantnummer:
- IRF740PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-220AB | |
| Series | IRF740 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-220AB | ||
Series IRF740 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Length 10.41mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
Vishay IRF740 Series Power MOSFET, 400V Maximum Drain Source Voltage, 125W Maximum Power Dissipation - IRF740PBF
This power MOSFET is a high-voltage N‑channel transistor designed for switching and amplification tasks in power electronics. It operates across a wide temperature range and is supplied in a through-hole TO-220AB package for conventional board mounting and heat‑sinking. The device supports high drain-source voltage environments and is suitable where robust switching capability and manageable gate‑drive requirements are needed.
Features and Benefits:
• 400V drain-source rating enables high‑voltage switching capability
• 10A continuous drain current supports substantial load currents
• 125W power dissipation allows sustained thermal handling
• 550 mΩ Rds(on) provides predictable conduction losses
• 63 nC typical gate charge reduces switching drive energy
• 20V maximum gate-source permits common gate‑drive voltages
• 10A continuous drain current supports substantial load currents
• 125W power dissipation allows sustained thermal handling
• 550 mΩ Rds(on) provides predictable conduction losses
• 63 nC typical gate charge reduces switching drive energy
• 20V maximum gate-source permits common gate‑drive voltages
Applications
• Suitable for switch‑mode power supply output stages
• Ideal for high‑voltage DC‑DC converter switching
• Used with industrial motor drives requiring high Vds
• Can be used for inverter circuits in power electronics
• Suitable for general‑purpose high‑voltage switching
• Ideal for high‑voltage DC‑DC converter switching
• Used with industrial motor drives requiring high Vds
• Can be used for inverter circuits in power electronics
• Suitable for general‑purpose high‑voltage switching
What thermal range can it tolerate in demanding environments?
The device is rated for operation from -55 °C up to 150 °C, enabling use in a wide range of thermal conditions.
How is the device mounted and cooled in typical designs?
It uses a TO-220AB through‑hole package that accommodates standard heatsinks and screws for thermal management and chassis attachment.
What gate‑drive limitations should designers observe?
The gate must be kept within ±20V maximum relative to source to avoid damage and to maintain correct enhancement‑mode operation.
What channel characteristics affect switching polarity?
It is an N‑channel enhancement‑mode device, meaning it requires a positive gate‑source voltage to conduct.
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