Vishay IRF740A Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740APBF

RS-stocknr.:: 178-0831
Fabrikantnummer:: IRF740APBF
Fabrikant:: Vishay

Vishay IRF740A Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740APBF

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Subtotaal (1 tube van 50 eenheden)*

€ 79,20

(excl. BTW)

€ 95,85

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Plus verzending 900 stuk(s) vanaf 20 juli 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,584	€ 79,20
100 - 200	€ 1,362	€ 68,10
250 +	€ 1,267	€ 63,35

*prijsindicatie

RS-stocknr.:: 178-0831
Fabrikantnummer:: IRF740APBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	400V
	Series	IRF740A
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	550mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Power Dissipation Pd	125W
	Maximum Operating Temperature	150°C
	Width	4.7mm
	Standards/Approvals	RoHS
	Length	10.41mm
	Height	9.01mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 400V
	Series IRF740A
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 550mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Power Dissipation Pd 125W
	Maximum Operating Temperature 150°C
	Width 4.7mm
	Standards/Approvals RoHS
	Length 10.41mm
	Height 9.01mm
	Automotive Standard No

Vishay IRF740A Series Power MOSFET, 400V Maximum Drain Source Voltage, 10A Maximum Continuous Drain Current - IRF740APBF

This power MOSFET is a high-voltage N-channel switching transistor designed for demanding industrial and automation environments. It handles high drain-to-source voltages and suits circuits that require robust switching capability and moderate continuous current capacity while being mounted on a through-hole PCB format.

Features and Benefits:

• 400V rated drain-to-source voltage provides high-voltage switching capability • 10A continuous drain current supports sustained power delivery • 550mΩ low Rds(on) reduces conduction losses during operation • 125W power dissipation enables high-power handling in assemblies • 36nC typical gate charge allows predictable switching behaviour • 150°C maximum operating temperature tolerates elevated thermal conditions

Applications

• Suitable for industrial inverter and converter power stages • Ideal for motor drive switching in automation systems • Used with high-voltage power supplies in test equipment • Can be used for switch-mode power supply primary switches • Suitable for high-voltage relay replacement and protection circuits

What mounting method is required for reliable thermal contact?

It is supplied in a TO-220AB through-hole package that enables secure heatsink attachment via the rear mounting tab for effective heat removal.

How tolerant is the gate to control voltage excursions?

The gate accepts up to 30V between gate and source, allowing standard gate drive voltages while protecting against overvoltage.

What ambient temperature range can it operate in?

It functions across a wide temperature span from -55°C up to its maximum 150°C junction limit for elevated-temperature applications.

How does the device behave during hard switching events?

The specified gate charge of 36nC and the device capacitances define switching losses and timing, which helps in calculating drive requirements for hard-switching topologies.