Vishay IRF710 Type N-Channel Power MOSFET, 1.2 A, 400 V Enhancement, 3-Pin TO-220AB IRF710PBF
- RS-stocknr.:
- 543-0074
- Artikelnummer Distrelec:
- 171-15-165
- Fabrikantnummer:
- IRF710PBF
- Fabrikant:
- Vishay
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*prijsindicatie
- RS-stocknr.:
- 543-0074
- Artikelnummer Distrelec:
- 171-15-165
- Fabrikantnummer:
- IRF710PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | IRF710 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 36W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Length | 10.41mm | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 400V | ||
Series IRF710 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 36W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Length 10.41mm | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Automotive Standard No | ||
Vishay IRF710 Series Power MOSFET, 400V Drain Source Voltage, 36W Power Dissipation - IRF710PBF
This power MOSFET is a high-voltage, N-channel device intended for switching and amplification duties in through-hole power designs. It operates reliably across a wide thermal span and is supplied in a commonly used TO-220AB package, making it suitable for integration into discrete power stages where robust voltage handling is required.
Features and Benefits:
• 400V drain voltage enabling high-voltage switching capability
• 36W maximum dissipation supporting moderate power handling
• 3.6Ω on-resistance minimises conduction losses where currents are low
• 1.2A continuous drain current for sustained light-load operation
• 17nC typical gate charge for predictable switching performance
• ±20V gate tolerance allowing standard gate-drive voltages
• 36W maximum dissipation supporting moderate power handling
• 3.6Ω on-resistance minimises conduction losses where currents are low
• 1.2A continuous drain current for sustained light-load operation
• 17nC typical gate charge for predictable switching performance
• ±20V gate tolerance allowing standard gate-drive voltages
Applications
• Suitable for mains-linked switch-mode power supplies
• Ideal for inverter front-end and high-voltage regulators
• Used with discrete transistor stages in hobbyist and service repairs
• Can be used for snubber or clamp circuits in protection networks
• Suitable for through-hole prototypes and repair replacements
• Ideal for inverter front-end and high-voltage regulators
• Used with discrete transistor stages in hobbyist and service repairs
• Can be used for snubber or clamp circuits in protection networks
• Suitable for through-hole prototypes and repair replacements
What thermal range can I expect during operation?
The device is rated to function from -55°C up to 150°C, accommodating environments from sub-zero storage to elevated operating conditions.
How should I mount it for effective heat dissipation?
The through-hole TO-220AB package permits fastening to a heatsink or chassis using the mounting tab to improve thermal transfer and maintain junction temperatures.
What gate-drive considerations are necessary for switching?
Drive voltages must remain within ±20V
the 17nC gate charge helps estimate driver current requirements for desired switching speeds.
Is this component suitable for automotive applications?
It is not specified for automotive standards, so it should be avoided where automotive qualification is required.
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