Vishay IRF710 Type N-Channel Power MOSFET, 1.2 A, 400 V Enhancement, 3-Pin TO-220AB IRF710PBF

RS-stocknr.:: 178-0855
Fabrikantnummer:: IRF710PBF
Fabrikant:: Vishay

Vishay IRF710 Type N-Channel Power MOSFET, 1.2 A, 400 V Enhancement, 3-Pin TO-220AB IRF710PBF

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Subtotaal (1 tube van 50 eenheden)*

€ 41,90

(excl. BTW)

€ 50,70

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 1.200 stuk(s) vanaf 10 augustus 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,838	€ 41,90
100 - 200	€ 0,712	€ 35,60
250 +	€ 0,628	€ 31,40

*prijsindicatie

RS-stocknr.:: 178-0855
Fabrikantnummer:: IRF710PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	1.2A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-220AB
	Series	IRF710
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.6Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	17nC
	Forward Voltage Vf	1.6V
	Maximum Power Dissipation Pd	36W
	Maximum Operating Temperature	150°C
	Height	9.01mm
	Length	10.41mm
	Standards/Approvals	RoHS
	Width	4.7mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 1.2A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-220AB
	Series IRF710
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.6Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 17nC
	Forward Voltage Vf 1.6V
	Maximum Power Dissipation Pd 36W
	Maximum Operating Temperature 150°C
	Height 9.01mm
	Length 10.41mm
	Standards/Approvals RoHS
	Width 4.7mm
	Automotive Standard No

Datasheet

Vishay IRF710 Series Power MOSFET, 400V Drain Source Voltage, 36W Power Dissipation - IRF710PBF

This power MOSFET is a high-voltage, N-channel device intended for switching and amplification duties in through-hole power designs. It operates reliably across a wide thermal span and is supplied in a commonly used TO-220AB package, making it suitable for integration into discrete power stages where robust voltage handling is required.

Features and Benefits:

• 400V drain voltage enabling high-voltage switching capability
• 36W maximum dissipation supporting moderate power handling
• 3.6Ω on-resistance minimises conduction losses where currents are low
• 1.2A continuous drain current for sustained light-load operation
• 17nC typical gate charge for predictable switching performance
• ±20V gate tolerance allowing standard gate-drive voltages

Applications

• Suitable for mains-linked switch-mode power supplies
• Ideal for inverter front-end and high-voltage regulators
• Used with discrete transistor stages in hobbyist and service repairs
• Can be used for snubber or clamp circuits in protection networks
• Suitable for through-hole prototypes and repair replacements

What thermal range can I expect during operation?

The device is rated to function from -55°C up to 150°C, accommodating environments from sub-zero storage to elevated operating conditions.

How should I mount it for effective heat dissipation?

The through-hole TO-220AB package permits fastening to a heatsink or chassis using the mounting tab to improve thermal transfer and maintain junction temperatures.

What gate-drive considerations are necessary for switching?

Drive voltages must remain within ±20V

the 17nC gate charge helps estimate driver current requirements for desired switching speeds.

Is this component suitable for automotive applications?

It is not specified for automotive standards, so it should be avoided where automotive qualification is required.