Vishay IRF740LC Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740LCPBF

RS-stocknr.:: 919-4485
Fabrikantnummer:: IRF740LCPBF
Fabrikant:: Vishay

Vishay IRF740LC Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740LCPBF

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Subtotaal (1 tube van 50 eenheden)*

€ 64,25

(excl. BTW)

€ 77,75

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 2.450 stuk(s) vanaf 10 augustus 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,285	€ 64,25
100 - 200	€ 1,131	€ 56,55
250 +	€ 0,951	€ 47,55

*prijsindicatie

RS-stocknr.:: 919-4485
Fabrikantnummer:: IRF740LCPBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-220AB
	Series	IRF740LC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	550mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	2V
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	39nC
	Maximum Power Dissipation Pd	125W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	9.01mm
	Standards/Approvals	RoHS
	Length	10.41mm
	Width	4.7mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-220AB
	Series IRF740LC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 550mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 2V
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 39nC
	Maximum Power Dissipation Pd 125W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 9.01mm
	Standards/Approvals RoHS
	Length 10.41mm
	Width 4.7mm
	Automotive Standard No

Land van herkomst:: PH

Vishay IRF740LC Series Power MOSFET, 400V Maximum Drain Source Voltage, 10A Maximum Continuous Drain Current - IRF740LCPBF

This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion tasks in industrial electronics. It operates in enhancement mode and is suited to through-hole mounting in TO-220AB packages for applications requiring moderate current handling and high blocking voltage. The device conforms to RoHS restrictions and functions across a wide thermal span appropriate for demanding environments.

Features and Benefits:

• 400V drain-source rating enables high-voltage switching capability
• 10A continuous drain current supports substantial load currents
• 125W maximum dissipation allows sustained power handling
• 550mΩ Rds(on) limits conduction losses at load currents
• 39nC typical gate charge permits predictable switching behaviour
• 30V gate threshold protects against excessive gate drive

Applications

• Suitable for power-supply switching in medium-power converters
• Ideal for industrial motor-control stage elements
• Used with high-voltage DC-DC conversion topologies
• Can be used for load switching in battery systems
• Suitable for general-purpose power-electronics prototyping

What packaging and mounting method does it use?

It is supplied in a TO-220AB package designed for through-hole mounting, enabling straightforward heatsinking and PCB attachment.

How does it behave across temperature extremes?

It is rated to operate from -55°C up to 150°C, allowing use in a broad range of thermal conditions with maintained performance parameters.

What is the forward voltage during conduction?

The typical forward voltage is 2V, which indicates the expected voltage drop when the device is conducting in its normal operating region.

Is it intended for automotive-standard qualification?

It is not specified as meeting automotive-grade standards and should be evaluated accordingly for vehicle applications.