Vishay IRF740S Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-263 IRF740SPBF

RS-stocknr.:: 178-0832
Fabrikantnummer:: IRF740SPBF
Fabrikant:: Vishay

Vishay IRF740S Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-263 IRF740SPBF

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Subtotaal (1 tube van 50 eenheden)*

€ 85,80

(excl. BTW)

€ 103,80

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 550 stuk(s) vanaf 10 augustus 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,716	€ 85,80
100 - 200	€ 1,459	€ 72,95
250 +	€ 1,373	€ 68,65

*prijsindicatie

RS-stocknr.:: 178-0832
Fabrikantnummer:: IRF740SPBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-263
	Series	IRF740S
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	550mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Typical Gate Charge Qg @ Vgs	63nC
	Forward Voltage Vf	2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Height	4.83mm
	Length	10.67mm
	Standards/Approvals	RoHS
	Width	9.65mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-263
	Series IRF740S
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 550mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Typical Gate Charge Qg @ Vgs 63nC
	Forward Voltage Vf 2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Height 4.83mm
	Length 10.67mm
	Standards/Approvals RoHS
	Width 9.65mm
	Automotive Standard No

Vishay IRF740S Series Power MOSFET, 400V Drain Source Voltage, 10A Continuous Drain Current - IRF740SPBF

This power MOSFET is a high-voltage N-channel transistor designed for switching and power-conversion roles in surface-mount assemblies. It operates across a wide ambient range and is intended for applications requiring controlled gate drive and robust power handling while conforming to RoHS directives.

Features and Benefits:

• 400V drain-source rating enables high-voltage switching
• 10A continuous drain current supports substantial load currents
• 125W power-dissipation capability improves thermal headroom
• 550mΩ Rds(on) balances conduction losses and control simplicity
• 63nC typical gate charge allows predictable switching behaviour
• 20V maximum gate-source rating protects gate-drive design

Applications

• Suitable for switch-mode power supplies in industrial equipment
• Ideal for high-voltage motor-drive stages and inverters
• Used with isolated gate drivers in renewable-energy converters
• Can be used for DC-DC converters handling moderate currents
• Appropriate for power management on densely populated SMT boards

What temperature extremes can this device tolerate during operation?

It is specified to function from -55°C up to 150°C, covering typical commercial and extended-industrial ranges.

How does the package affect board-level assembly and thermal performance?

The TO-263 surface-mount package permits soldered thermal transfer to PCB copper planes and supports higher dissipation in compact SMT layouts.

What gate-drive constraints should designers observe to avoid damage?

The gate-source voltage must not exceed 20V to prevent gate-oxide stress and potential failure.

How many external connections does the device present for circuit integration?

It provides three pins consistent with standard single-channel MOSFET connections for drain, source and gate.