Infineon HEXFET N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 913-3932
Fabrikantnummer:: IRFB4227PBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 54,55

(excl. BTW)

€ 66,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending 900 stuk(s) vanaf 19 augustus 2027
Plus verzending 1.000 stuk(s) vanaf 14 oktober 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,091	€ 54,55
100 - 200	€ 1,003	€ 50,15
250 +	€ 0,949	€ 47,45

*prijsindicatie

RS-stocknr.:: 913-3932
Fabrikantnummer:: IRFB4227PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	65A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	24mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	330W
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	-30V, +30V
	Typical Gate Charge Qg @ Vgs	70nC
	Maximum Operating Temperature	175°C
	Width	4.82mm
	Standards/Approvals	RoHS
	Length	10.66mm
	Height	9.02mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 65A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 24mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 330W
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs -30V, +30V
	Typical Gate Charge Qg @ Vgs 70nC
	Maximum Operating Temperature 175°C
	Width 4.82mm
	Standards/Approvals RoHS
	Length 10.66mm
	Height 9.02mm
	Automotive Standard No

Land van herkomst:: CN

Infineon HEXFET Series MOSFET, 200V Maximum Drain-Source Voltage, 65A Maximum Continuous Drain Current - IRFB4227PBF

This MOSFET is a high-current N-channel enhancement device designed for power switching and control in demanding electronic systems. It operates across a wide temperature range and is supplied in a through-hole TO-220 package suitable for conventional board mounting. The device meets RoHS requirements and is intended for applications requiring substantial continuous current handling and thermal resilience.

Features and Benefits:

• 24mΩ low Rds(on) gives reduced conduction losses
• 330W power dissipation enables sustained thermal load handling
• 70nC gate charge allows Faster switching transitions
• 30V gate tolerance supports robust gate-drive margins
• -40°C to 175°C rating sustains wide operating environments

Applications

• Suitable for high-current DC motor controllers
• Ideal for switch-mode power supplies and converters
• Used with battery management and power distribution systems
• Can be used for industrial inverter stages
• Suitable for general-purpose power switching on through-hole boards

What is the device’s package and mounting style?

It is supplied in a TO-220 package and intended for through-hole mounting.

What operating temperature extremes can it withstand?

It is rated to operate from -40°C up to 175°C.

How does the device address regulatory material restrictions?

It conforms to RoHS standards limiting hazardous substances.

What is the channel type and conduction mode?

It is an N-channel device operating in enhancement mode.

What are the gate and drain voltage limits?

The gate is rated to ±30V and the drain-to-source maximum is 200V.