Infineon HEXFET Type N-Channel MOSFET, 76 A, 200 V TO-220 IRFB4127PBF
- RS-stocknr.:
- 257-5807
- Fabrikantnummer:
- IRFB4127PBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 6,53
(excl. BTW)
€ 7,902
(incl. BTW)
Voeg 28 eenheden toe voor gratis bezorging
Op voorraad
- 944 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,265 | € 6,53 |
| 20 - 48 | € 2,84 | € 5,68 |
| 50 - 98 | € 2,645 | € 5,29 |
| 100 - 198 | € 2,445 | € 4,89 |
| 200 + | € 2,285 | € 4,57 |
*prijsindicatie
- RS-stocknr.:
- 257-5807
- Fabrikantnummer:
- IRFB4127PBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | PCB | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type PCB | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard through-hole power package
High-current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
Gerelateerde Links
- Infineon Type N-Channel MOSFET, 76 A, 200 V TO-220
- Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V TO-220
- Infineon HEXFET Type N-Channel MOSFET, 12 A, 200 V TO-220
- Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V TO-220 IRFB4620PBF
- Infineon HEXFET Type N-Channel MOSFET, 12 A, 200 V TO-220 IRF200B211
- Infineon HEXFET Type N-Channel MOSFET, 26 A, 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET, 56 A, 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 200 V Enhancement, 3-Pin TO-220