Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-247

RS-stocknr.:: 913-3972
Fabrikantnummer:: IRFP4227PBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-247

Bulkkorting beschikbaar

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Subtotaal (1 tube van 25 eenheden)*

€ 45,65

(excl. BTW)

€ 55,225

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per tube*
25 - 25	€ 1,826	€ 45,65
50 - 100	€ 1,734	€ 43,35
125 - 225	€ 1,661	€ 41,53
250 - 475	€ 1,588	€ 39,70
500 +	€ 1,478	€ 36,95

*prijsindicatie

RS-stocknr.:: 913-3972
Fabrikantnummer:: IRFP4227PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	65A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	25mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	70nC
	Maximum Power Dissipation Pd	330W
	Maximum Operating Temperature	175°C
	Length	15.9mm
	Height	20.3mm
	Width	5.3mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 65A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 25mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 70nC
	Maximum Power Dissipation Pd 330W
	Maximum Operating Temperature 175°C
	Length 15.9mm
	Height 20.3mm
	Width 5.3mm
	Standards/Approvals No
	Automotive Standard No

Land van herkomst:: MX

Infineon HEXFET Series MOSFET, 65A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRFP4227PBF

This MOSFET functions as a vital component in contemporary electronic applications, offering dependable control and switching for high-power systems. It delivers robust performance and efficiency, making it suitable for a variety of industrial tasks, particularly in settings where high thermal resistance and low conduction losses are essential. The enhancement mode design facilitates optimal operation under diverse conditions, thereby making it ideal for automation, electrical systems, and mechanical applications.

Features & Benefits

• Provides 65A continuous drain current for intensive applications

• Operates efficiently at a maximum drain-source voltage of 200V

• Low RDS(on) contributes to energy efficiency during use

• Rated for high temperature tolerance up to 175°C

• Optimised for fast switching with minimal fall and rise times

• Offers excellent repetitive avalanche capability for enhanced system reliability

Applications

• Utilised in energy recovery systems to enhance efficiency

• Compatible with PDP sustain for effective performance

• Suitable for high-power motor drive circuits requiring accurate control

• Employed in switching power supplies within automation processes

• Used in professional audio amplifiers for effective output handling

What is the maximum current that can be handled at elevated temperatures?

It can manage a continuous drain current of 46A at 100°C, ensuring functionality in tough environments.

How does this component perform under pulsed conditions?

The pulsed drain current can reach up to 130A, making it appropriate for transient applications.

What are the cooling requirements when using this device?

It has a thermal resistance of 0.45°C/W from junction to case, requiring effective heat dissipation mechanisms for optimal operation.

What type of mounting is required for installation?

Installation necessitates through-hole mounting, suitable for robust applications needing solid connections.

How does the gate charge impact switching speed?

It features a typical total gate charge of 70nC, enabling quick and efficient switching, which is crucial in high-speed applications.