Infineon HEXFET Type N-Channel MOSFET, 94 A, 200 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 913-3907
- Fabrikantnummer:
- IRFP90N20DPBF
- Fabrikant:
- Infineon
Subtotaal (1 tube van 25 eenheden)*
€ 103,90
(excl. BTW)
€ 125,725
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 50 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 300 stuk(s) vanaf 09 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 25 + | € 4,156 | € 103,90 |
*prijsindicatie
- RS-stocknr.:
- 913-3907
- Fabrikantnummer:
- IRFP90N20DPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 94A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Power Dissipation Pd | 580W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Height | 20.3mm | |
| Width | 5.3 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 94A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Power Dissipation Pd 580W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Height 20.3mm | ||
Width 5.3 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MX
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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