Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 688-6973
Fabrikantnummer:: IRFB5620PBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V Enhancement, 3-Pin TO-220

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 2 eenheden)*

€ 4,70

(excl. BTW)

€ 5,68

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

4 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 1.350 stuk(s) vanaf 14 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
2 - 18	€ 2,35	€ 4,70
20 - 48	€ 2,03	€ 4,06
50 - 98	€ 1,885	€ 3,77
100 - 198	€ 1,765	€ 3,53
200 +	€ 1,62	€ 3,24

*prijsindicatie

RS-stocknr.:: 688-6973
Fabrikantnummer:: IRFB5620PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	73mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Power Dissipation Pd	14W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.67mm
	Height	9.02mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 73mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Power Dissipation Pd 14W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.67mm
	Height 9.02mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 200V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - IRFB5620PBF

This MOSFET is a high-voltage, N-channel semiconductor switch designed for through-hole power applications. It operates as an enhancement-mode device suitable for switching and amplification tasks in demanding environments, and it is housed in a TO-220 package for straightforward mounting and heat-sinking.

Features and Benefits:

• 200V drain voltage supports high-voltage switching
• 25A continuous drain current enables robust load handling
• 73mΩ Rds(on) reduces conduction losses in power circuits
• 25nC gate charge allows controlled switching speeds
• 14W power dissipation permits moderate thermal loading
• Gate tolerance to 20V protects against overdrive events

Applications

• Suitable for high-voltage motor driver stages
• Ideal for switch-mode power supplies in industrial equipment
• Used for inverter-leg switching in power conversion
• Can be used for audio amplifier output stages
• Appropriate for general-purpose power switching on through-hole boards

What temperature extremes can it tolerate during operation?

It is specified to operate from -55°C up to 175°C, enabling use across extended thermal ranges.

How does the package affect mounting and thermal management?

The TO-220 through-hole package simplifies attachment to heatsinks and printed circuit boards for effective heat dissipation.

What gate voltage limits should be observed when driving it?

The maximum gate-to-source voltage rating is 20V, so gate drivers should remain within this threshold.

How does its channel type influence circuit design?

As an N-channel enhancement-mode device, it requires a positive gate-source voltage to conduct, which suits low-side and high-side switch topologies when driven appropriately.