Infineon OptiMOS Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 3-Pin SC-70

RS-stocknr.:: 827-0058
Fabrikantnummer:: BSS214NH6327XTSA1
Fabrikant:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 3-Pin SC-70

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 rol van 250 eenheden)*

€ 49,75

(excl. BTW)

€ 60,25

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 01 januari 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
250 - 250	€ 0,199	€ 49,75
500 - 1000	€ 0,194	€ 48,50
1250 - 2250	€ 0,189	€ 47,25
2500 - 6000	€ 0,184	€ 46,00
6250 +	€ 0,179	€ 44,75

*prijsindicatie

RS-stocknr.:: 827-0058
Fabrikantnummer:: BSS214NH6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.5A
	Maximum Drain Source Voltage Vds	20V
	Series	OptiMOS
	Package Type	SC-70
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.8V
	Typical Gate Charge Qg @ Vgs	0.8nC
	Maximum Power Dissipation Pd	500mW
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	0.8mm
	Length	2mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.5A
	Maximum Drain Source Voltage Vds 20V
	Series OptiMOS
	Package Type SC-70
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.8V
	Typical Gate Charge Qg @ Vgs 0.8nC
	Maximum Power Dissipation Pd 500mW
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 0.8mm
	Length 2mm
	Automotive Standard AEC-Q101

Infineon OptiMOS Series MOSFET, 20V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSS214NH6327XTSA1

This n-channel MOSFET is a compact surface-mount switch designed for low-voltage electronics and automotive applications. It operates as an enhancement-mode transistor to control current in power-management and signal-switching circuits while withstanding a wide temperature range suited to demanding environments.

Features and Benefits:

• Low drain-source resistance 250 mΩ reduces conduction losses
• Maximum drain current 1.5A supports moderate load currents
• Maximum drain-source voltage 20V enables low-voltage power stages
• Typical gate charge 0.8 nC allows faster switching transitions
• Maximum power dissipation 500 mW manages thermal loading in small footprints
• Maximum gate-source voltage 12V permits compatibility with common drive levels

Applications

• Suitable for DC-DC converter low-side switching
• Ideal for power distribution in automotive electronics
• Used with gate drivers requiring rapid switching response
• Can be used for load switching on compact PCBs
• Suitable for battery-powered device power management

What operating temperatures can it endure in harsh conditions?

It functions across a broad range from -55°C up to 150°C for high-temperature stability.

How does the package affect board population and assembly?

The SC-70 surface-mount package facilitates dense PCB layouts and automated pick-and-place assembly.

What electrical limit should designers observe for gate drive?

Do not exceed a gate-source voltage of 12V to avoid damaging the gate oxide.

How much vertical space should a designer allow for component clearance?

Allow for a component height of 0.8mm when planning enclosure and stacking constraints.