Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 20 V Enhancement, 3-Pin SC-70 BSS816NWH6327XTSA1

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€ 18,90

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€ 22,80

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RS-stocknr.:
110-7113
Fabrikantnummer:
BSS816NWH6327XTSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.4A

Maximum Drain Source Voltage Vds

20V

Series

OptiMOS 2

Package Type

SC-70

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

240mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

0.6nC

Maximum Power Dissipation Pd

500mW

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Length

2mm

Standards/Approvals

No

Height

0.8mm

Automotive Standard

AEC-Q101

Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 1.4A Maximum Continuous Drain Current - BSS816NWH6327XTSA1


This MOSFET is a compact N‑channel enhancement device designed for low-voltage switching in automotive and industrial electronic systems. It operates across an extended temperature range and is intended for surface-mount applications where a small footprint and modest power handling are required.

Features and Benefits:


• Low on-resistance 240 mΩ reduces conduction losses and heat
• Maximum drain current 1.4A enables moderate load switching
• Drain-source voltage rating 20V supports typical automotive rails
• Gate charge 0.6 nC allows faster gate drive and reduced switching loss
• Power dissipation 500 mW permits sustained operation under light load
• Gate-source limit 8V protects against excessive drive voltages

Applications


• Suitable for switch stages in automotive sensor modules
• Ideal for load switching in 12V auxiliary circuits
• Used with battery-management peripherals requiring a small footprint
• Can be used for signal‑level power control in infotainment systems
• Applicable to compact motor‑drive gate stages for low currents

What package suits high-density board layouts?


It is supplied in an SC-70 surface-mount package that minimises board area and supports automated placement.

How does it perform in elevated ambient temperatures?


The device is specified for operation from -40 °C up to 175 °C, allowing use in harsh thermal environments typical of under‑bonnet automotive locations.

What drive voltage range should be applied to the gate?


The maximum permissible gate‑to‑source voltage is 8V, so gate drivers should be selected to remain within this limit.

How does the device balance switching speed and gate drive energy?


With a typical gate charge of 0.6 nC it requires relatively low energy to switch, aiding efficiency in systems with repetitive transitions.

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