Infineon OptiMOS Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 3-Pin SC-70 BSS214NWH6327XTSA1

RS-stocknr.:: 165-5863
Fabrikantnummer:: BSS214NWH6327XTSA1
Fabrikant:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 3-Pin SC-70 BSS214NWH6327XTSA1

Subtotaal (1 rol van 3000 eenheden)*

€ 282,00

(excl. BTW)

€ 342,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 3.000 stuk(s) vanaf 31 augustus 2026

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Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,094	€ 282,00

*prijsindicatie

RS-stocknr.:: 165-5863
Fabrikantnummer:: BSS214NWH6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.5A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SC-70
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	0.8nC
	Maximum Gate Source Voltage Vgs	12V
	Maximum Power Dissipation Pd	500mW
	Forward Voltage Vf	0.8V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	1.25mm
	Standards/Approvals	No
	Height	0.8mm
	Length	2mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.5A
	Maximum Drain Source Voltage Vds 20V
	Package Type SC-70
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 0.8nC
	Maximum Gate Source Voltage Vgs 12V
	Maximum Power Dissipation Pd 500mW
	Forward Voltage Vf 0.8V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 1.25mm
	Standards/Approvals No
	Height 0.8mm
	Length 2mm
	Automotive Standard AEC-Q101

Land van herkomst:: CN

Infineon OptiMOS Series MOSFET, 20V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSS214NWH6327XTSA1

This MOSFET is a compact N-channel enhancement device designed for surface-mount power switching and management in constrained electronic assemblies. It operates across a wide ambient span suited to demanding temperature conditions and is engineered for low-voltage, low-current applications where efficient conduction and rapid gate response are required.

Features and Benefits:

• 20V drain-source rating enables low-voltage power designs
• 250mΩ Rds(on) reduces conduction losses in switching paths
• 0.8nC typical gate charge supports fast gate transitions
• 1.5A continuous drain current handles modest load currents
• 500mW maximum dissipation allows safe thermal headroom
• 12V gate threshold maximises gate-drive flexibility

Applications

• Suitable for automotive sensor power switching
• Ideal for battery management and load disconnects
• Used with control logic in distributed power modules
• Can be used for small DC-DC converter stages
• Suitable for portable device power-path switching

What thermal range can it tolerate in extreme environments?

It is specified to function from -55°C up to 150°C, permitting use in high-temperature automotive zones.

How compact is it for high-density board layouts?

The component is supplied in a tiny SC-70 surface-mount package measuring 2mm by 1.25mm with a low profile of 0.8 mm.

What gate-drive limits should designers observe?

The gate-source voltage must not exceed 12V to avoid overstressing the gate dielectric.

How does the device behave under continuous load?

It supports a steady drain current of 1.5A while dissipating up to 500mW within its thermal constraints.