Infineon OptiMOS Type N-Channel MOSFET, 70 A, 40 V Enhancement, 8-Pin TDSON IPC70N04S5L4R2ATMA1
- RS-stocknr.:
- 222-4662
- Fabrikantnummer:
- IPC70N04S5L4R2ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 15 eenheden)*
€ 9,435
(excl. BTW)
€ 11,415
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 60 | € 0,629 | € 9,44 |
| 75 - 135 | € 0,597 | € 8,96 |
| 150 - 360 | € 0,572 | € 8,58 |
| 375 - 735 | € 0,547 | € 8,21 |
| 750 + | € 0,509 | € 7,64 |
*prijsindicatie
- RS-stocknr.:
- 222-4662
- Fabrikantnummer:
- IPC70N04S5L4R2ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.25mm | |
| Width | 5.58 mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Length 5.25mm | ||
Width 5.58 mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
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