Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON
- RS-stocknr.:
- 214-8969
- Fabrikantnummer:
- BSC010N04LSIATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 4.635,00
(excl. BTW)
€ 5.610,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 29 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,927 | € 4.635,00 |
*prijsindicatie
- RS-stocknr.:
- 214-8969
- Fabrikantnummer:
- BSC010N04LSIATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 275A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Maximum Power Dissipation Pd | 139W | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 275A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Maximum Power Dissipation Pd 139W | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Automotive Standard No | ||
The Infineon New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
Monolithic integrated Schottky-like diode
Optimized for synchronous rectification
100% avalanche tested
Gerelateerde Links
- Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1
- Infineon OptiMOS-TM5 Type N-Channel MOSFET, 275 A, 60 V Enhancement, 8-Pin PG-TDSON-8 FL ISC025N08NM5LF2ATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET, 70 A, 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON BSC014N04LSATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TDSON BSZ065N03LSATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 70 A, 40 V Enhancement, 8-Pin TDSON IPC70N04S5L4R2ATMA1