Infineon OptiMOS Type N-Channel MOSFET, 13 A, 34 V Enhancement, 8-Pin TDSON
- RS-stocknr.:
- 214-8978
- Fabrikantnummer:
- BSC0996NSATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 1.285,00
(excl. BTW)
€ 1.555,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 01 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,257 | € 1.285,00 |
*prijsindicatie
- RS-stocknr.:
- 214-8978
- Fabrikantnummer:
- BSC0996NSATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 34V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 7.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.49mm | |
| Height | 1.1mm | |
| Width | 6.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 34V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 7.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 5.49mm | ||
Height 1.1mm | ||
Width 6.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
It comes with Improved switching behaviour
100% Avalanche tested
Gerelateerde Links
- Infineon OptiMOS Type N-Channel MOSFET, 13 A, 34 V Enhancement, 8-Pin TDSON BSC0996NSATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET, 165 A, 80 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN08S7N024ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN08S7N034ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET, 214 A, 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N012ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET, 179 A, 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7L014ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET, 268 A, 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N009ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET, 173 A, 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N015ATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 57 A, 30 V Enhancement, 8-Pin TDSON