Infineon OptiMOS-TM7 N-Channel MOSFET, 214 A, 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N012ATMA1
- RS-stocknr.:
- 349-012
- Fabrikantnummer:
- IAUCN04S7N012ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 10 eenheden)*
€ 12,96
(excl. BTW)
€ 15,68
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
- Plus verzending 4.980 stuk(s) vanaf 02 november 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,296 | € 12,96 |
| 100 - 240 | € 1,231 | € 12,31 |
| 250 - 490 | € 1,14 | € 11,40 |
| 500 - 990 | € 1,05 | € 10,50 |
| 1000 + | € 1,013 | € 10,13 |
*prijsindicatie
- RS-stocknr.:
- 349-012
- Fabrikantnummer:
- IAUCN04S7N012ATMA1
- Fabrikant:
- Infineon
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 214A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-TDSON-8-34 | |
| Series | OptiMOS-TM7 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.51mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 105W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 800mV | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 214A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-TDSON-8-34 | ||
Series OptiMOS-TM7 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.51mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 105W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 800mV | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- MY
Infineon IAU Series MOSFET, 214A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IAUCN04S7N012ATMA1
Features & Benefits
Applications
What are the benefits of having a Type C tripping characteristic?
What is the significance of the 5kA breaking capacity?
How does the device perform in varying ambient temperatures?
What type of conductors can be connected to the terminals?
Gerelateerde Links
- Infineon OptiMOS-TM7 N-Channel MOSFET, 268 A, 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N009ATMA1
- Infineon OptiMOS-TM7 N-Channel MOSFET, 173 A, 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N015ATMA1
- Infineon OptiMOS-TM7 N-Channel MOSFET, 165 A, 80 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN08S7N024ATMA1
- Infineon OptiMOS-TM7 N-Channel MOSFET, 179 A, 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7L014ATMA1
- Infineon OptiMOS-TM7 N-Channel MOSFET, 120 A, 80 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN08S7N034ATMA1
- Infineon OptiMOS-TM7 N-Channel MOSFET, 139 A, 40 V Enhancement, 8-Pin PG-TDSON-8-33 IAUCN04S7N020ATMA1
- Infineon OptiMOS-TM7 N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin PG-TDSON-8-33 IAUCN04S7L028ATMA1
- Infineon OptiMOS-TM7 N-Channel MOSFET, 414 A, 40 V Enhancement, 8-Pin PG-TDSON-8-43 IAUCN04S7N005ATMA1
