Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1
- RS-stocknr.:
- 214-8970
- Fabrikantnummer:
- BSC010N04LSIATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 13,02
(excl. BTW)
€ 15,755
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 29 januari 2027
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,604 | € 13,02 |
| 25 - 45 | € 2,24 | € 11,20 |
| 50 - 120 | € 2,084 | € 10,42 |
| 125 - 245 | € 1,956 | € 9,78 |
| 250 + | € 1,796 | € 8,98 |
*prijsindicatie
- RS-stocknr.:
- 214-8970
- Fabrikantnummer:
- BSC010N04LSIATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 275A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 139W | |
| Forward Voltage Vf | 0.7V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Width | 6.1mm | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 275A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 139W | ||
Forward Voltage Vf 0.7V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Width 6.1mm | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Automotive Standard No | ||
The Infineon New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
Monolithic integrated Schottky-like diode
Optimized for synchronous rectification
100% avalanche tested
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