Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 20 V Enhancement, 3-Pin SC-70
- RS-stocknr.:
- 166-0980
- Fabrikantnummer:
- BSS816NWH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 156,00
(excl. BTW)
€ 189,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 30.000 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,052 | € 156,00 |
| 6000 - 12000 | € 0,049 | € 147,00 |
| 15000 + | € 0,046 | € 138,00 |
*prijsindicatie
- RS-stocknr.:
- 166-0980
- Fabrikantnummer:
- BSS816NWH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | OptiMOS 2 | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Length | 2mm | |
| Width | 1.25 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series OptiMOS 2 | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Length 2mm | ||
Width 1.25 mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- MY
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 20 V Enhancement, 3-Pin SC-70 BSS816NWH6327XTSA1
- Infineon OptiMOS Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 3-Pin SC-70
- Infineon OptiMOS Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 3-Pin SC-70 BSS214NH6327XTSA1
- Infineon OptiMOS Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 3-Pin SC-70 BSS214NWH6327XTSA1
- Infineon OptiMOS P Type P-Channel MOSFET, 310 mA, 20 V Enhancement, 3-Pin SC-70
- Infineon OptiMOS P Type P-Channel MOSFET, 310 mA, 20 V Enhancement, 3-Pin SC-70 BSS223PWH6327XTSA1
- Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin SOT-23 BSS316NH6327XTSA1