Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3

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RS-stocknr.:
814-1304
Fabrikantnummer:
SIS415DNT-T1-GE3
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET Gen III

Package Type

PowerPAK 1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0095Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

52W

Typical Gate Charge Qg @ Vgs

55.5nC

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

12 V

Maximum Operating Temperature

150°C

Width

3.4 mm

Standards/Approvals

RoHS

Height

0.8mm

Length

3.4mm

Automotive Standard

No

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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