Vishay Type N-Channel Power MOSFET, 6 A, 400 V Enhancement, 3-Pin TO-220AB SIHP6N40D-GE3
- RS-stocknr.:
- 787-9187
- Fabrikantnummer:
- SIHP6N40D-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 5,56
(excl. BTW)
€ 6,73
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- 195 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,112 | € 5,56 |
| 50 - 245 | € 1,09 | € 5,45 |
| 250 - 495 | € 0,832 | € 4,16 |
| 500 - 1245 | € 0,78 | € 3,90 |
| 1250 + | € 0,67 | € 3,35 |
*prijsindicatie
- RS-stocknr.:
- 787-9187
- Fabrikantnummer:
- SIHP6N40D-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.51mm | |
| Width | 4.65 mm | |
| Standards/Approvals | No | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.51mm | ||
Width 4.65 mm | ||
Standards/Approvals No | ||
Height 9.01mm | ||
Automotive Standard No | ||
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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