Vishay SIHP Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3
- RS-stocknr.:
- 268-8320
- Fabrikantnummer:
- SIHP150N60E-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 9,68
(excl. BTW)
€ 11,72
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 1.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 4,84 | € 9,68 |
| 10 - 18 | € 4,37 | € 8,74 |
| 20 - 98 | € 4,285 | € 8,57 |
| 100 - 498 | € 3,575 | € 7,15 |
| 500 + | € 3,035 | € 6,07 |
*prijsindicatie
- RS-stocknr.:
- 268-8320
- Fabrikantnummer:
- SIHP150N60E-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHP | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 179W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHP | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 179W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay E series power MOSFET with fast body diode and 4 generation E series technology which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correcti
Low effective capacitance
Avalanche energy rated
Low figure of merit
Gerelateerde Links
- Vishay SIHP Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3
- Vishay SIHP Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3
- Vishay SIHP Type N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-220AB SIHP054N65E-GE3
- Vishay SIHP Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
- Vishay SIHP Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3
- Vishay ThunderFET Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-220AB SUP70040E-GE3
- Vishay EF Type N-Channel Single MOSFETs, 8 A, 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3
- Vishay D Series Type N-Channel Power MOSFET, 8.7 A, 500 V Enhancement, 3-Pin TO-220AB SIHP8N50D-GE3