Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- RS-stocknr.:
- 268-8298
- Fabrikantnummer:
- SIHG150N60E-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 tube van 25 eenheden)*
€ 75,175
(excl. BTW)
€ 90,95
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 500 stuk(s) vanaf 28 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 25 - 75 | € 3,007 | € 75,18 |
| 100 - 475 | € 2,462 | € 61,55 |
| 500 - 975 | € 2,099 | € 52,48 |
| 1000 + | € 1,891 | € 47,28 |
*prijsindicatie
- RS-stocknr.:
- 268-8298
- Fabrikantnummer:
- SIHG150N60E-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | SIHG | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series SIHG | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.7mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay E series power MOSFET which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.
Low effective capacitance
Avalanche energy rated
Low figure of merit
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