Vishay EF Type N-Channel Power MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3

RS-stocknr.:: 268-8296
Fabrikantnummer:: SIHG085N60EF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3

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Subtotaal (1 tube van 25 eenheden)*

€ 82,85

(excl. BTW)

€ 100,25

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Laatste voorraad RS

Laatste 475 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per tube*
25 - 75	€ 3,314	€ 82,85
100 - 475	€ 2,766	€ 69,15
500 - 975	€ 2,732	€ 68,30
1000 +	€ 2,699	€ 67,48

*prijsindicatie

RS-stocknr.:: 268-8296
Fabrikantnummer:: SIHG085N60EF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	650V
	Series	EF
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.084Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	184W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	63nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	15.7mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 650V
	Series EF
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.084Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 184W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 63nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 15.7mm
	Automotive Standard No

Datasheet - SIHG085N60EF-GE3

Land van herkomst:: CN

Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 34A Maximum Continuous Drain Current - SIHG085N60EF-GE3

This power MOSFET is a high-voltage N‑channel switching device designed for through‑hole mounting in power assemblies. It is intended for use where robust high-voltage switching and efficient conduction are required across extended temperature ranges, and it conforms to RoHS environmental restrictions.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications
• 34A continuous drain current supports substantial load handling
• 0.084Ω Rds(on) reduces conduction losses under load
• 184W power dissipation allows significant thermal throughput
• 63nC typical gate charge offers predictable drive requirements
• -55°C to 150°C operating range permits harsh environment use

Applications

• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive inversion stages
• Used with discrete power converters in robotics
• Can be used for inverter front-end switching stages
• Suitable for power factor correction circuits

What package and mounting style does it use?

It is supplied in a TO-247AC package and designed for through‑hole mounting to enable secure board fixation and straightforward heatsinking.

What gate drive voltage limits should I observe?

The maximum gate‑to‑source rating is 30V, so gate drive circuitry must remain within this boundary to prevent gate damage.

How does thermal performance relate to installation?

The device’s 184W dissipation rating requires adequate heatsinking and thermal management to maintain junction temperatures below specified limits during high‑power operation.

Is it suitable for automotive systems?

It is not specified to automotive standards

suitability depends on system safety and qualification requirements beyond the provided ratings.