Infineon SIPMOS N-Channel MOSFET, 350 mA, 240 V Enhancement, 4-Pin SOT-223 BSP89H6327XTSA1

RS-stocknr.:: 445-2281
Fabrikantnummer:: BSP89H6327XTSA1
Fabrikant:: Infineon

Infineon SIPMOS N-Channel MOSFET, 350 mA, 240 V Enhancement, 4-Pin SOT-223 BSP89H6327XTSA1

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 5 eenheden)*

€ 4,75

(excl. BTW)

€ 5,75

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 5 stuk(s) vanaf 12 oktober 2026
Plus verzending 50 stuk(s) vanaf 19 oktober 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 0,95	€ 4,75
50 - 245	€ 0,874	€ 4,37
250 - 495	€ 0,818	€ 4,09
500 - 1245	€ 0,758	€ 3,79
1250 +	€ 0,704	€ 3,52

*prijsindicatie

RS-stocknr.:: 445-2281
Fabrikantnummer:: BSP89H6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	350mA
	Maximum Drain Source Voltage Vds	240V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	6Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	4.3nC
	Maximum Power Dissipation Pd	1.8W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Length	6.5mm
	Standards/Approvals	No
	Width	3.5mm
	Height	1.6mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 350mA
	Maximum Drain Source Voltage Vds 240V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 6Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 4.3nC
	Maximum Power Dissipation Pd 1.8W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Length 6.5mm
	Standards/Approvals No
	Width 3.5mm
	Height 1.6mm
	Automotive Standard AEC-Q101

Niet conform

Infineon SIPMOS® Series MOSFET, 350 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP89H6327XTSA1

This MOSFET is a key component for high-voltage electronic applications, providing effective switching capabilities. Utilising N-channel enhancement mode technology, it is suitable for automotive and industrial electronics, ensuring efficient operation in various conditions. The SOT-223 package enables versatile surface mounting, making it appropriate for contemporary circuit designs.

Features & Benefits

• Maximum continuous drain current of 350mA

• High drain-source voltage rating of 240V for enhanced safety

• Low gate threshold voltage improves sensitivity

• Power dissipation capability of up to 1.8W

• Ideal for logic-level applications with quick switching times

Applications

• Power management in automotive electronics

• MOSFET-based switching power supplies

• Signal amplification in electronic circuits

What is the maximum temperature range for operation?

It operates effectively within a temperature range of -55°C to +150°C, suitable for various environmental conditions.

How does the gate threshold voltage affect performance?

A low gate threshold voltage allows the MOSFET to activate at lower input voltages, enhancing efficiency in battery-operated devices.

What type of mounting is compatible with this device?

This component is designed for surface mounting in a SOT-223 package, facilitating easy integration into PCBs.

Can it handle pulsed drain currents?

Yes, it can manage pulsed drain currents of up to 1.4A, offering additional flexibility for burst power applications.

Is it suitable for use with microcontrollers?

Yes, its logic-level compatibility allows for direct interfacing with microcontroller outputs for effective control.