Infineon SIPMOS Type N-Channel MOSFET, 170 mA, 400 V Enhancement, 4-Pin SOT-223

RS-stocknr.:: 165-5810
Fabrikantnummer:: BSP324H6327XTSA1
Fabrikant:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 170 mA, 400 V Enhancement, 4-Pin SOT-223

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€ 301,00

(excl. BTW)

€ 364,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Verzending vanaf 09 oktober 2026

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Aantal stuks	Per stuk	Per rol*
1000 - 1000	€ 0,301	€ 301,00
2000 - 2000	€ 0,286	€ 286,00
3000 +	€ 0,268	€ 268,00

*prijsindicatie

RS-stocknr.:: 165-5810
Fabrikantnummer:: BSP324H6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	170mA
	Maximum Drain Source Voltage Vds	400V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	25Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	0.8V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	4.54nC
	Maximum Power Dissipation Pd	1.8W
	Maximum Operating Temperature	150°C
	Height	1.6mm
	Standards/Approvals	No
	Length	6.5mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 170mA
	Maximum Drain Source Voltage Vds 400V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 25Ω
	Channel Mode Enhancement
	Forward Voltage Vf 0.8V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 4.54nC
	Maximum Power Dissipation Pd 1.8W
	Maximum Operating Temperature 150°C
	Height 1.6mm
	Standards/Approvals No
	Length 6.5mm
	Automotive Standard AEC-Q101

Land van herkomst:: CN

Infineon SIPMOS Series MOSFET, 400V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP324H6327XTSA1

This MOSFET is a high-voltage N-channel transistor designed for surface-mount power switching in demanding environments. It serves as a switching or control element in circuits that require an enhancement-mode device capable of handling substantial drain-source voltages and automotive-level qualification. The device is presented in a compact SOT-223 package suitable for board-mounted applications where thermal and electrical performance must be balanced.

Features and Benefits:

• 400V drain-source rating enables high-voltage switching applications
• 25Ω maximum Rds(on) reduces conduction losses in low-current circuits
• 170mA continuous drain current supports small-signal power tasks
• 1.8W maximum power dissipation manages moderate thermal loads
• 4.54nC typical gate charge allows faster gate transitions with less drive energy
• 0.8V forward voltage improves diode drop efficiency in switching events

Applications

• Suitable for auxiliary circuits in automotive electronics
• Ideal for high-voltage control in power-supply snubber networks
• Used with gate drivers for low-current switching stages
• Can be used for load protection in sensing modules
• Appropriate for surface-mount assemblies in compact power designs

What temperature range can it operate across?

It functions across a wide ambient span from -55°C up to 150°C for use in thermally varied installations.

How many pins and what mounting style are offered?

The device comes with four pins and is intended for surface mounting on printed circuit boards.

What gate voltage limits must be observed during design?

Gate drive must be kept within ±20V to avoid exceeding the maximum gate-source rating.

What package footprint and external sizing should designers expect?

The transistor is supplied in a SOT-223 package with overall dimensions of 6.5 x 3.5 x 1.6mm for PCB layout planning.