Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Enhancement, 4-Pin SOT-223

RS-stocknr.:: 165-5811
Fabrikantnummer:: BSP125H6327XTSA1
Fabrikant:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Enhancement, 4-Pin SOT-223

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€ 355,00

(excl. BTW)

€ 430,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Verzending vanaf 02 november 2026

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Aantal stuks	Per stuk	Per rol*
1000 - 1000	€ 0,355	€ 355,00
2000 - 2000	€ 0,338	€ 338,00
3000 +	€ 0,316	€ 316,00

*prijsindicatie

RS-stocknr.:: 165-5811
Fabrikantnummer:: BSP125H6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	120mA
	Maximum Drain Source Voltage Vds	600V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	45Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	4.4nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	1.8W
	Forward Voltage Vf	0.8V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	3.5mm
	Standards/Approvals	No
	Height	1.5mm
	Length	6.5mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 120mA
	Maximum Drain Source Voltage Vds 600V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 45Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 4.4nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 1.8W
	Forward Voltage Vf 0.8V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 3.5mm
	Standards/Approvals No
	Height 1.5mm
	Length 6.5mm
	Automotive Standard AEC-Q101

Land van herkomst:: CN

Infineon SIPMOS Series MOSFET, 600V Maximum Drain Source Voltage, 120mA Maximum Continuous Drain Current - BSP125H6327XTSA1

This MOSFET is a high-voltage N-channel switching device designed for surface-mounted power applications in demanding environments. It operates across a wide temperature range and is intended for circuits requiring high drain‑to‑source blocking capability and controlled switching behaviour. The package supports automated PCB assembly and is suited to electronic systems in transportation and industrial contexts.

Features and Benefits:

• 600V drain‑source rating enables high-voltage switching capability
• 45Ω maximum Rds reduces leakage in off-state conditions
• 4.4nC typical gate charge for faster gate transitions
• 120mA continuous drain current for low-current power stages
• 0.8V forward voltage minimises conduction drop in diode path
• 1.8W maximum dissipation supports modest power handling

Applications

• Suitable for automotive high-voltage auxiliary circuits
• Ideal for input-stage switching in power supplies
• Used with industrial sensor interfaces requiring isolation
• Can be used for small motor driver protection elements
• Practical for battery management and charging subsystems

What mounting method is required for board assembly?

It is supplied in a surface-mount SOT-223 style package intended for soldered PCB attachment and reflow processes.

How does it behave across temperature extremes?

Rated to operate from -55°C to 150°C, the device maintains switching function and specified limits throughout that thermal span.

What gate voltage limits should designers observe?

The maximum gate‑to‑source voltage is 20V, so drive circuits must not exceed this amplitude to avoid damage.

Are there constraints on pulse versus continuous current?

The specified continuous drain capability is 120mA

higher transient currents would require thermal and safe‑operating‑area assessment.