Infineon SIPMOS Type N-Channel MOSFET, 350 mA, 240 V Depletion, 4-Pin SOT-223 BSP129H6327XTSA1

RS-stocknr.:: 753-2800
Fabrikantnummer:: BSP129H6327XTSA1
Fabrikant:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 350 mA, 240 V Depletion, 4-Pin SOT-223 BSP129H6327XTSA1

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Verzending 5 stuk(s) vanaf 13 augustus 2026
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RS-stocknr.:: 753-2800
Fabrikantnummer:: BSP129H6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	350mA
	Maximum Drain Source Voltage Vds	240V
	Series	SIPMOS
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	20Ω
	Channel Mode	Depletion
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	3.8nC
	Maximum Power Dissipation Pd	1.8W
	Maximum Operating Temperature	150°C
	Height	1.6mm
	Standards/Approvals	No
	Length	6.5mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 350mA
	Maximum Drain Source Voltage Vds 240V
	Series SIPMOS
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 20Ω
	Channel Mode Depletion
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 3.8nC
	Maximum Power Dissipation Pd 1.8W
	Maximum Operating Temperature 150°C
	Height 1.6mm
	Standards/Approvals No
	Length 6.5mm
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 240V Maximum Drain Source Voltage, 350mA Maximum Continuous Drain Current - BSP129H6327XTSA1

This MOSFET is a high-voltage N-channel device designed for surface-mount power switching in demanding electronic systems. It operates across an extended ambient range and is suited to applications that require controlled conduction at elevated voltages while remaining compatible with SOT-223 mounting and automotive-grade expectations.

Features and Benefits:

• 240V drain rating enables high-voltage switching applications
• 350mA continuous drain current supports low-power loads
• 20Ω maximum Rds provides predictable on-state behaviour
• 3.8nC typical gate charge facilitates efficient switching
• 1.8W power dissipation allows moderate thermal loading
• 1.2V forward voltage ensures low voltage drop in conduction

Applications

• Used for high-voltage signal switching in automotive subsystems
• Suitable for low-current power rails and control circuitry
• Ideal for board-level power conditioning modules
• Used with thermal management on compact surface assemblies
• Can be used for battery-management peripheral functions

What gate drive constraints should I consider for switching?

The device accepts up to 20V between gate and source

design gate drivers to respect this limit and to provide adequate slew for the 3.8nC gate charge to balance switching speed and EMI.

How does temperature affect its electrical limits?

The component is specified to operate from -55°C to 150°C

designers must account for derating of power dissipation and junction-to-ambient thermal resistance when operating near the upper temperature bound.

What mounting considerations apply for thermal control?

The SOT-223 package is surface-mounted and benefits from PCB copper area for heat spreading

use a thermal pad or additional copper to maintain junction temperature under the 1.8W dissipation.

Are there specific pin-count constraints for layout?

The device presents four pins

ensure correct pad pattern and trace widths to handle the continuous drain current and to minimise parasitic resistance.