Infineon IPP65R190CFD7A Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin PG-TO220-3 IPP65R190CFD7AAKSA1
- RS-stocknr.:
- 273-3021
- Fabrikantnummer:
- IPP65R190CFD7AAKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 119,70
(excl. BTW)
€ 144,85
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 500 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 2,394 | € 119,70 |
| 100 + | € 2,224 | € 111,20 |
*prijsindicatie
- RS-stocknr.:
- 273-3021
- Fabrikantnummer:
- IPP65R190CFD7AAKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO220-3 | |
| Series | IPP65R190CFD7A | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 77W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AECQ101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO220-3 | ||
Series IPP65R190CFD7A | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 77W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AECQ101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V cool MOS N channel automotive SJ power MOSFET. It has highest reliability in the field meeting automotive lifetime requirements.
Enabling of higher power density designs
Granular portfolio available
Gerelateerde Links
- Infineon IPP65R190CFD7A Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin PG-TO220-3
- Infineon IGP40N65F5XKSA1 IGBT 650 V PG-TO220-3
- Infineon IGP40N65H5XKSA1 IGBT, 74 A 650 V, 3-Pin PG-TO220-3
- Infineon IKP40N65H5XKSA1 IGBT, 74 A 650 V, 3-Pin PG-TO220-3
- Infineon IKP39N65ES5XKSA1 Single IGBT, 62 A 650 V, 3-Pin PG-TO220
- Infineon IKP40N65F5XKSA1 Single IGBT, 74 A 650 V, 3-Pin PG-TO220
- Infineon IKA15N65ET6XKSA2 Single IGBT, 34 A 650 V, 3-Pin PG-TO220
- Infineon IKA10N65ET6XKSA2 Single IGBT, 25 A 650 V, 3-Pin PG-TO220
