Infineon IPP Type N-Channel MOSFET, 135 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1
- RS-stocknr.:
- 349-000
- Fabrikantnummer:
- IPP60R016CM8XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 13,64
(excl. BTW)
€ 16,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 500 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 13,64 |
| 10 - 99 | € 12,28 |
| 100 + | € 11,31 |
*prijsindicatie
- RS-stocknr.:
- 349-000
- Fabrikantnummer:
- IPP60R016CM8XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 135A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPP | |
| Package Type | PG-TO220-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 625W | |
| Typical Gate Charge Qg @ Vgs | 171nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 135A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPP | ||
Package Type PG-TO220-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 625W | ||
Typical Gate Charge Qg @ Vgs 171nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.
Suitable for hard and soft switching topologies
Ease of use and fast design in through low ringing tendency
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
Increased power density solutions enabled by using products with smaller footprint
Gerelateerde Links
- Infineon IPP Type N-Channel Power Transistor, 98 A, 135 V Enhancement, 3-Pin PG-TO220-3 IPP073N13NM6AKSA1
- Infineon IPP Type N-Channel MOSFET, 70 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R037CM8XKSA1
- Infineon IPP Type N-Channel Power Transistor, 19 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R180CM8XKSA1
- Infineon IPP Type N-Channel MOSFET, 36.23 A, 700 V Enhancement, 3-Pin PG-TO220-3
- Infineon IPP Type N-Channel MOSFET, 36.23 A, 700 V Enhancement, 3-Pin PG-TO220-3 IPP65R060CFD7XKSA1
- Infineon IPP Type N-Channel Power Transistor, 39 A, 200 V Enhancement, 3-Pin PG-TO220-3 IPP339N20NM6AKSA1
- Infineon IPP Type N-Channel Power Transistor, 136 A, 200 V Enhancement, 3-Pin PG-TO220-3 IPP069N20NM6AKSA1
- Infineon IPA Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPAN60R180CM8XKSA1