Vishay EF Type N-Channel Power MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3

RS-stocknr.:: 239-5382
Fabrikantnummer:: SIHP24N80AEF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3

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Subtotaal (1 tube van 50 eenheden)*

€ 96,00

(excl. BTW)

€ 116,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 15 februari 2027

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,92	€ 96,00
100 - 200	€ 1,805	€ 90,25
250 +	€ 1,668	€ 83,40

*prijsindicatie

RS-stocknr.:: 239-5382
Fabrikantnummer:: SIHP24N80AEF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	800V
	Series	EF
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.195Ω
	Typical Gate Charge Qg @ Vgs	90nC
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	208W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 800V
	Series EF
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.195Ω
	Typical Gate Charge Qg @ Vgs 90nC
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 208W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHP24N80AEF-GE3

Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 20A Continuous Drain Current - SIHP24N80AEF-GE3

This power MOSFET is a high-voltage N-channel switching device designed for through-hole power electronics. It is intended for use in environments requiring robust switching at elevated voltages and currents, delivering controlled conduction and fast switching behaviour for industrial and converter applications while operating across a very wide temperature range.

Features and Benefits:

• 800V drain-source rating enables high-voltage switching
• 20A continuous drain current supports heavy load handling
• 0.195Ω low Rds(on) reduces conduction losses
• 208W power dissipation allows high-power operation
• 90nC typical gate charge yields predictable switching dynamics
• 30V gate-source maximum protects gate integrity

Applications

• Suitable for high-voltage DC-DC converter stages
• Ideal for power supply primary switch functions
• Used with motor drive front-end circuits
• Can be used for industrial inverter switching
• Suitable for laboratory high-voltage test rigs

What package and mounting method does it use?

It is supplied in a TO-220AB package and is intended for through-hole mounting to allow straightforward heatsinking and chassis attachment.

What thermal range can it withstand in demanding environments?

The device is specified to operate from -55°C up to 150°C, accommodating wide ambient and elevated junction temperatures.

How does the forward voltage affect switching performance?

The typical forward voltage of 1.2V indicates conduction-threshold behaviour during body-diode conduction and influences loss calculations during reverse-recovery and freewheeling events.

Is this device suitable for automotive-standard designs?

It is not designated to meet automotive standards and should not be assumed compliant with automotive-specific requirements.