Infineon OptiMOS 2 Type N-Channel MOSFET, 27 A, 100 V Enhancement, 3-Pin TO-252 IPD33CN10NGATMA1
- RS-stocknr.:
- 215-2506
- Fabrikantnummer:
- IPD33CN10NGATMA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 20 eenheden)*
€ 11,50
(excl. BTW)
€ 13,92
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 + | € 0,575 | € 11,50 |
*prijsindicatie
- RS-stocknr.:
- 215-2506
- Fabrikantnummer:
- IPD33CN10NGATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 58W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 58W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).
N-channel, normal level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free lead plating
Qualified according to JEDEC for target application
Ideal for high-frequency switching and synchronous rectification
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