Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252

RS-stocknr.:: 165-5971
Fabrikantnummer:: IPD30N08S2L21ATMA1
Fabrikant:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252

Subtotaal (1 rol van 2500 eenheden)*

€ 1.622,50

(excl. BTW)

€ 1.962,50

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 09 november 2026

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Aantal stuks	Per stuk	Per rol*
2500 +	€ 0,649	€ 1.622,50

*prijsindicatie

RS-stocknr.:: 165-5971
Fabrikantnummer:: IPD30N08S2L21ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	75V
	Package Type	TO-252
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	26mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	56nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	136W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	2.41mm
	Length	6.73mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 75V
	Package Type TO-252
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 26mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 56nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 136W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 2.41mm
	Length 6.73mm
	Automotive Standard AEC-Q101

N.v.t.

Land van herkomst:: CN

Infineon OptiMOS Series MOSFET, 75V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - IPD30N08S2L21ATMA1

This MOSFET is a power switching transistor designed for demanding electronic systems, providing controlled conduction between drain and source in N-channel enhancement-mode configurations. It is intended for surface-mount assembly in compact power designs and for use where elevated operating temperatures and automotive-grade qualification are required.

Features and Benefits:

• 75V drain voltage enabling robust high-voltage switching
• 30A continuous current supporting substantial load delivery
• 26mΩ low Rds(on) reducing conduction losses
• 136W dissipation capacity aiding thermal margin in designs
• 56nC typical gate charge improving switching speed control
• ±20V gate tolerance allowing flexible gate-drive schemes

Applications

• Suitable for automotive DC-DC converter stages
• Ideal for synchronous rectification in power supplies
• Used with motor-drive inverter front-end circuits
• Can be used for high-efficiency point-of-load converters
• Suitable for board-level power management in vehicles

What packaging type should designers expect for PCB layout?

The device is supplied in a TO-252 package intended for surface mounting, which affects land-pattern and thermal-pad design.

How does the device handle extreme ambient conditions?

It is rated to operate across a wide temperature span from -55°C up to 175°C to suit high-temperature environments.

What gate-drive considerations are required for control circuitry?

The maximum gate-source rating is ±20V

gate-drive circuits should limit excursions within this range and account for the 56nC typical gate charge when sizing drivers.

Are there specific thermal performance constraints to plan for?

With a maximum power dissipation of 136W, thermal management must consider conduction paths and board-level heat sinking to maintain junction limits.