Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252
- RS-stocknr.:
- 223-8517
- Fabrikantnummer:
- IPD50N06S409ATMA2
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2500 eenheden)*
€ 822,50
(excl. BTW)
€ 995,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,329 | € 822,50 |
*prijsindicatie
- RS-stocknr.:
- 223-8517
- Fabrikantnummer:
- IPD50N06S409ATMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.95V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 71W | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.95V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 71W | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS series N-channel MOSFET in DPAK package has drain to source voltage of 60 V. It has benefits of highest current capability, lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
Gerelateerde Links
- Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S409ATMA2
- Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L08ATMA2
- Infineon OptiMOS-T2 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L12ATMA2
- Infineon OptiMOS Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S4L12ATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin TO-252