Infineon OptiMOS N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S409ATMA2

RS-stocknr.:: 223-8517
Fabrikantnummer:: IPD50N06S409ATMA2
Fabrikant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S409ATMA2

Subtotaal (1 rol van 2500 eenheden)*

€ 822,50

(excl. BTW)

€ 995,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Aantal stuks	Per stuk	Per rol*
2500 +	€ 0,329	€ 822,50

*prijsindicatie

RS-stocknr.:: 223-8517
Fabrikantnummer:: IPD50N06S409ATMA2
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	17nC
	Maximum Power Dissipation Pd	71W
	Forward Voltage Vf	950mV
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 17nC
	Maximum Power Dissipation Pd 71W
	Forward Voltage Vf 950mV
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD50N06S409ATMA2

Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50N06S409ATMA2

This MOSFET is a surface-mount N-channel enhancement device designed to control power in electronic systems requiring high current and moderate voltage handling. It operates across a wide temperature range suitable for demanding thermal environments and is intended for use where efficient switching and power management are required.

Features and Benefits:

• Low on-resistance reduces conduction losses during high-current operation
• High continuous drain capability supports sustained 50 A currents
• 60 V drain-source rating enables mid-voltage power stages
• 71 W power dissipation allows handling of elevated thermal loads
• 17 nC typical gate charge enables relatively fast switching transitions
• 20 V gate tolerance accommodates higher gate-drive voltages

Applications

• Suitable for synchronous buck converter switching stages
• Ideal for motor-driver power stages in industrial controllers
• Used with battery-management systems requiring high current handling
• Can be used for DC-DC power conversion in telecoms equipment
• Appropriate for power distribution modules on surface-mounted assemblies

What is the device’s allowable gate-drive range?

The gate may be driven up to 20 V between gate and source without exceeding its gate-voltage limit.

How does the thermal range affect deployment in harsh environments?

It remains operational from −55 °C to 175 °C so it can function in wide-temperature applications where thermal extremes occur.

What packaging and mount method does it use for assembly?

It is supplied in a TO-252 package designed for surface-mount placement on assemblies.

What conduction characteristic indicates efficiency during on-state?

A maximum drain-source resistance of 9 mΩ minimises voltage drop and conduction losses at high currents.

How does forward voltage impact low-voltage power stages?

A forward voltage of 0.95 V limits additional voltage drop across the device during conduction, aiding efficiency.