Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S409ATMA2
- RS-stocknr.:
- 223-8518
- Fabrikantnummer:
- IPD50N06S409ATMA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 15 eenheden)*
€ 13,02
(excl. BTW)
€ 15,75
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 19.905 stuk(s) vanaf 09 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 60 | € 0,868 | € 13,02 |
| 75 - 135 | € 0,825 | € 12,38 |
| 150 - 360 | € 0,79 | € 11,85 |
| 375 - 735 | € 0,755 | € 11,33 |
| 750 + | € 0,703 | € 10,55 |
*prijsindicatie
- RS-stocknr.:
- 223-8518
- Fabrikantnummer:
- IPD50N06S409ATMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 71W | |
| Forward Voltage Vf | 0.95V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 71W | ||
Forward Voltage Vf 0.95V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS series N-channel MOSFET in DPAK package has drain to source voltage of 60 V. It has benefits of highest current capability, lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
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