Infineon HEXFET Type N-Channel MOSFET, 51 A, 55 V, 3-Pin TO-263
- RS-stocknr.:
- 214-4463
- Fabrikantnummer:
- IRFZ46ZSTRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 800 eenheden)*
€ 482,40
(excl. BTW)
€ 584,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 800 stuk(s) vanaf 02 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 800 - 800 | € 0,603 | € 482,40 |
| 1600 - 1600 | € 0,573 | € 458,40 |
| 2400 + | € 0,537 | € 429,60 |
*prijsindicatie
- RS-stocknr.:
- 214-4463
- Fabrikantnummer:
- IRFZ46ZSTRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 82W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 82W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon Strong IRFET power MOSFET is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications requiring performance and ruggedness.
It is optimized for synchronous rectification
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