Infineon HEXFET Type N-Channel MOSFET, 51 A, 55 V, 3-Pin TO-263 IRFZ46ZSTRLPBF
- RS-stocknr.:
- 214-4464
- Fabrikantnummer:
- IRFZ46ZSTRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 15 eenheden)*
€ 16,905
(excl. BTW)
€ 20,46
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 1.185 stuk(s) vanaf 02 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 60 | € 1,127 | € 16,91 |
| 75 - 135 | € 1,071 | € 16,07 |
| 150 - 360 | € 1,049 | € 15,74 |
| 375 - 735 | € 0,981 | € 14,72 |
| 750 + | € 0,913 | € 13,70 |
*prijsindicatie
- RS-stocknr.:
- 214-4464
- Fabrikantnummer:
- IRFZ46ZSTRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Maximum Power Dissipation Pd | 82W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Maximum Power Dissipation Pd 82W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon Strong IRFET power MOSFET is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications requiring performance and ruggedness.
It is optimized for synchronous rectification
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 51 A, 55 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V TO-263 IRFZ48NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V TO-263 IRL3705NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 51 A, 150 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 51 A, 150 V, 3-Pin TO-263 IRFS52N15DTRLP
- Infineon HEXFET Type N-Channel MOSFET, 240 A, 55 V, 7-Pin TO-263