Infineon HEXFET Type N-Channel MOSFET, 131 A, 55 V TO-263 IRF1405STRLPBF
- RS-stocknr.:
- 257-9276
- Artikelnummer Distrelec:
- 304-40-516
- Fabrikantnummer:
- IRF1405STRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 11,04
(excl. BTW)
€ 13,36
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 680 stuk(s) vanaf 19 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,208 | € 11,04 |
| 25 - 45 | € 1,988 | € 9,94 |
| 50 - 120 | € 1,876 | € 9,38 |
| 125 - 245 | € 1,744 | € 8,72 |
| 250 + | € 1,61 | € 8,05 |
*prijsindicatie
- RS-stocknr.:
- 257-9276
- Artikelnummer Distrelec:
- 304-40-516
- Fabrikantnummer:
- IRF1405STRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 131A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 200W | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 131A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 200W | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRF series is the 55V single n channel HEXFET power mosfet in a D2 Pak package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
Capable of being wave soldered
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