Vishay E Type N-Channel Power MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3

RS-stocknr.:: 188-4982
Artikelnummer Distrelec:: 304-38-847
Fabrikantnummer:: SIHD2N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3

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€ 8,33

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€ 10,08

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GRATIS bezorging voor bestellingen vanaf € 90,00

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Plus verzending 1.400 stuk(s) vanaf 10 augustus 2026

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100 - 240	€ 0,751	€ 7,51
250 - 490	€ 0,708	€ 7,08
500 - 990	€ 0,542	€ 5,42
1000 +	€ 0,505	€ 5,05

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RS-stocknr.:: 188-4982
Artikelnummer Distrelec:: 304-38-847
Fabrikantnummer:: SIHD2N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.9A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-252
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.9Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	62.5W
	Typical Gate Charge Qg @ Vgs	7nC
	Maximum Operating Temperature	150°C
	Width	6.22mm
	Height	2.25mm
	Standards/Approvals	RoHS
	Length	6.73mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.9A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-252
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.9Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 62.5W
	Typical Gate Charge Qg @ Vgs 7nC
	Maximum Operating Temperature 150°C
	Width 6.22mm
	Height 2.25mm
	Standards/Approvals RoHS
	Length 6.73mm
	Automotive Standard No

Datasheet SIHD2N80AE-GE3

Vishay Series E Power MOSFET, 800V Maximum Drain Source Voltage, 62.5W Maximum Power Dissipation - SIHD2N80AE-GE3

This power MOSFET is a high-voltage switching device designed for use in industrial and power-conversion contexts. It operates as an enhancement-mode N-channel transistor and is intended for surface-mounted circuit designs where robust voltage handling and controlled switching behaviour are required. The device is supplied in a TO-252 package and meets RoHS environmental standards.

Features and Benefits:

• 800V drain-source capability enables high-voltage switching
• 2.9Ω Rds(on) supports moderate conduction losses
• 62.5W power dissipation allows elevated thermal loading
• 7nC typical gate charge delivers predictable switching energy
• 30V gate rating provides wide gate-drive margin
• 2.9A continuous drain current suits steady-state loads

Applications

• Suitable for high-voltage power converters and inverters
• Ideal for industrial switching supplies and auxiliary rails
• Used with gate drivers requiring modest charge budgets
• Can be used for non-automotive high-voltage load switching

What ambient temperature range can it tolerate during operation?

It is rated to function across a wide temperature span from -55°C up to 150°C, accommodating demanding industrial environments.

How does the package influence PCB mounting and the thermal path?

The TO-252 surface-mount package enables compact board placement and provides a direct thermal-conduction route to the PCB copper for heat dissipation.

What gate-drive considerations should be observed for switching performance?

Drive voltages should remain within ±30V limits and be sized to charge the gate with approximately 7nC to achieve the characterised switching behaviour without excessive drive current.

Is this suited to automotive system use?

It is not specified as automotive-grade, so it should not be selected where automotive-specific approvals are required.