Vishay E Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3

RS-stocknr.:: 210-4978
Fabrikantnummer:: SIHD11N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3

Subtotaal (1 rol van 3000 eenheden)*

€ 2.271,00

(excl. BTW)

€ 2.748,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 28 december 2026

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Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,757	€ 2.271,00

*prijsindicatie

RS-stocknr.:: 210-4978
Fabrikantnummer:: SIHD11N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-252
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	391mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	78W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	28nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Length	9.4mm
	Height	2.2mm
	Width	6.4mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-252
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 391mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 78W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 28nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Length 9.4mm
	Height 2.2mm
	Width 6.4mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHD11N80AE-GE3

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 8A Continuous Drain Current - SIHD11N80AE-GE3

This power MOSFET is a high-voltage N-channel enhancement-mode transistor intended for switching and power conversion in industrial electronic systems. It is supplied in a surface-mount TO-252 package and is designed to operate across a wide temperature range suitable for demanding environments. Key electrical limits and thermal handling allow use in circuits requiring elevated voltage tolerance and moderate continuous current capability.

Features and Benefits:

• 800V drain rating enables high-voltage switching applications • 8A continuous drain current supports steady-state load handling • 391mΩ Rds(on) reduces conduction losses for efficiency gains • 28nC typical gate charge minimises switching energy consumption • 78W power dissipation capability aids thermal margin in assemblies

Applications

• Suitable for primary-side switching in SMPS for industrial equipment • Ideal for high-voltage DC-DC conversion stages in power supplies • Used for inverter front-end switching in industrial motor drives • Can be used for snubber or clamp circuits in high-voltage systems

What gate drive considerations are required for reliable switching?

The device can tolerate gate voltages up to 30V, so gate drivers should provide appropriate Vgs levels while limiting transients to prevent overstress.

How does temperature affect allowable operation?

The component is rated to operate from -55°C up to 150°C

designers should account for derating of current and thermal resistance in elevated temperature conditions.

What package and mounting style does it use for PCB design?

It is supplied in a TO-252 surface-mount package with three pins, allowing soldered attachment to board copper and use of PCB thermal land patterns for heat dissipation.

What switching performance trade-offs should be expected?

Its moderate gate charge of 28nC balances switching speed and drive energy, while the relatively high Rds(on) implies higher conduction losses compared with low-resistance devices, which should be considered for efficiency budgets.