Vishay E Type N-Channel Power MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247AC SIHG20N50E-GE3
- RS-stocknr.:
- 169-5791
- Fabrikantnummer:
- SIHG20N50E-GE3
- Fabrikant:
- Vishay
Subtotaal (1 tube van 25 eenheden)*
€ 63,30
(excl. BTW)
€ 76,60
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 175 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 25 + | € 2,532 | € 63,30 |
*prijsindicatie
- RS-stocknr.:
- 169-5791
- Fabrikantnummer:
- SIHG20N50E-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247AC | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 184mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Standards/Approvals | RoHS | |
| Width | 5.31mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247AC | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 184mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Height 20.82mm | ||
Length 15.87mm | ||
Standards/Approvals RoHS | ||
Width 5.31mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Vishay Series E Power MOSFET, 500V Drain Source Voltage, 19A Maximum Continuous Drain Current - SIHG20N50E-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in industrial and electrical systems. It operates in enhancement mode and is supplied in a through-hole TO-247 package, making it suitable for assemblies that require robust mounting and straightforward thermal management. The device supports high drain-source voltage and is intended for applications demanding elevated power handling and gate drive capabilities.
Features and Benefits:
• 500V maximum Vds enabling high-voltage switching capability
• 19 A continuous drain current for substantial load handling
• 184 mΩ Rds(on) for reduced conduction losses
• 46 nC typical gate charge allowing predictable drive requirements
• 179W maximum power dissipation for high thermal stress management
• 30V maximum gate-source voltage for wide gate‑drive compatibility
• 19 A continuous drain current for substantial load handling
• 184 mΩ Rds(on) for reduced conduction losses
• 46 nC typical gate charge allowing predictable drive requirements
• 179W maximum power dissipation for high thermal stress management
• 30V maximum gate-source voltage for wide gate‑drive compatibility
Applications
• Suitable for high-voltage DC-DC converters in power systems
• Ideal for industrial motor drive switching stages
• Used with power supplies for telecoms and infrastructure equipment
• Can be used for hard-switching topologies in inverters
• Suitable for laboratory and prototyping through-hole power designs
• Ideal for industrial motor drive switching stages
• Used with power supplies for telecoms and infrastructure equipment
• Can be used for hard-switching topologies in inverters
• Suitable for laboratory and prototyping through-hole power designs
What temperature range can it reliably operate within?
The device is rated for a minimum ambient of -55 °C and a maximum operating temperature of 150 °C, accommodating a wide range of environmental conditions.
How does the package support mounting and heat removal?
The TO-247 through-hole package provides a large tab area for heatsinking and secure PCB or chassis mounting to facilitate thermal management in high-dissipation applications.
What gate‑drive limits should be observed during design?
Gate-source voltage must not exceed 30V to avoid gate oxide stress, and designers should size the driver to handle the typical 46 nC gate charge for controlled switching.
Are there considerations for switching losses with this device?
Designers should account for both the 184 mΩ conduction loss in the on-state and dynamic losses related to the 46 nC gate charge when calculating total switching energy.
Gerelateerde Links
- Vishay E Type N-Channel Power MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247AC SIHG20N50E-GE3
- Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-247AC
- Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-247AC
- Vishay E Type N-Channel Power MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247AC
- Vishay SiHG32N50D Type N-Channel MOSFET, 30 A, 500 V Enhancement, 3-Pin TO-247AC SiHG32N50D-GE3
- Vishay E Series Type N-Channel MOSFET, 15 A, 850 V Enhancement, 3-Pin TO-247AC SiHG17N80AEF-GE3
- Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-247AC SIHG15N80AE-GE3
- Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3